IRLI620G mosfet equivalent, power mosfet.
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IRLI620G
Peak Diode Recovery dv/dt Test Circuit
D.U.T Circuit Layout Considerations
* Low Stray Inductance
* Ground .
The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and extern.
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulatin.
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